NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login

Press Enter or click the Search button to begin your search.

Back to Results
FET charge sensor and voltage probeA MOSFET structure having a biased gate covered with an insulator is described. The insulator is of such a thickness as to render the structure capable of giving a measure of accumulated charge. The structure is also capable of being used in a stacked structure as a particle spectrometer.
Document ID
19870003880
Acquisition Source
Legacy CDMS
Document Type
Other - Patent
Authors
Robinson, P. A., Jr. (NASA Pasadena Office CA, United States)
Date Acquired
August 13, 2013
Publication Date
August 12, 1986
Subject Category
Solid-State Physics
Report/Patent Number
Patent Number: US-PATENT-4,605,946
Patent Application Number: US-PATENT-APPL-SN-641146
Patent Number: NASA-CASE-NPO-16045-1
Accession Number
87N13313
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-4,605,946|NASA-CASE-NPO-16045-1
Patent Application
US-PATENT-APPL-SN-641146

Related Records

There are no records associated with this record.
No Preview Available