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Rectenna Technology Program: Ultra light 2.45 GHz rectenna 20 GHz rectennaThe program had two general objectives. The first objective was to develop the two plane rectenna format for space application at 2.45 GHz. The resultant foreplane was a thin-film, etched-circuit format fabricated from a laminate composed of 2 mil Kapton F sandwiched between sheets of 1 oz copper. The thin-film foreplane contains half wave dipoles, filter circuits, rectifying Schottky diode, and dc bussing lead. It weighs 160 grams per square meter. Efficiency and dc power output density were measured at 85% and 1 kw/sq m, respectively. Special testing techniques to measure temperature of circuit and diode without perturbing microwave operation using the fluoroptic thermometer were developed. A second objective was to investigate rectenna technology for use at 20 GHz and higher frequencies. Several fabrication formats including the thin-film scaled from 2.45 GHz, ceramic substrate and silk-screening, and monolithic were investigated, with the conclusion that the monolithic approach was the best. A preliminary design of the monolithic rectenna structure and the integrated Schottky diode were made.
Document ID
19870010123
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Brown, William C.
(Raytheon Co. Waltham, MA, United States)
Date Acquired
September 5, 2013
Publication Date
March 11, 1987
Subject Category
Communications And Radar
Report/Patent Number
NAS 1.26:179558
NASA-CR-179558
PT-6807
Report Number: NAS 1.26:179558
Report Number: NASA-CR-179558
Report Number: PT-6807
Accession Number
87N19556
Funding Number(s)
CONTRACT_GRANT: NAS3-22764
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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