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Ion beam sputter etchingAn ion beam etching process which forms extremely high aspect ratio surface microstructures using thin sputter masks is utilized in the fabrication of integrated circuits. A carbon rich sputter mask together with unmasked portions of a substrate is bombarded with inert gas ions while simultaneous carbon deposition occurs. The arrival of the carbon deposit is adjusted to enable the sputter mask to have a near zero or even slightly positive increase in thickness with time while the unmasked portions have a high net sputter etch rate.
Document ID
19870011727
Document Type
Other - Patent
Authors
Banks, Bruce A. (NASA Lewis Research Center Cleveland, OH, United States)
Rutledge, Sharon K. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 13, 2013
Publication Date
November 4, 1986
Subject Category
ENGINEERING (GENERAL)
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-4,620,898|NASA-CASE-LEW-13899-1
Patent Application
US-PATENT-APPL-SN-775968

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