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Advanced dendritic web growth development and development of single-crystal silicon dendritic ribbon and high-efficiency solar cell programEfforts to demonstrate that the dendritic web technology is ready for commercial use by the end of 1986 continues. A commercial readiness goal involves improvements to crystal growth furnace throughput to demonstrate an area growth rate of greater than 15 sq cm/min while simultaneously growing 10 meters or more of ribbon under conditions of continuous melt replenishment. Continuous means that the silicon melt is being replenished at the same rate that it is being consumed by ribbon growth so that the melt level remains constant. Efforts continue on computer thermal modeling required to define high speed, low stress, continuous growth configurations; the study of convective effects in the molten silicon and growth furnace cover gas; on furnace component modifications; on web quality assessments; and on experimental growth activities.
Document ID
19870012867
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Duncan, C. S.
(Westinghouse Research and Development Center Pittsburgh, PA, United States)
Seidensticker, R. G.
(Westinghouse Research and Development Center Pittsburgh, PA, United States)
Mchugh, J. P.
(Westinghouse Research and Development Center Pittsburgh, PA, United States)
Hopkins, R. H.
(Westinghouse Research and Development Center Pittsburgh, PA, United States)
Date Acquired
September 5, 2013
Publication Date
August 29, 1986
Subject Category
Energy Production And Conversion
Report/Patent Number
DRL-220
JPL-9950-1255
NAS 1.26:180919
NASA-CR-180919
DOE/JPL-956999-84/5
Report Number: DRL-220
Report Number: JPL-9950-1255
Report Number: NAS 1.26:180919
Report Number: NASA-CR-180919
Report Number: DOE/JPL-956999-84/5
Accession Number
87N22300
Funding Number(s)
CONTRACT_GRANT: JPL-956999
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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