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An analysis of doping modulated superlattice structuresA new method of growing doping modulated superlattice structures is discussed. This method uses organo-metallic chemical vapor deposition (MO-CVD) with the added feature of controlled plasma in the growth regions. The main objective was to study how the growth environment affected the electronic and optical properties of the superlattice structures. Because a serious safety hazard was discovered in the growth process, no superlattice structures were fabricated and the research on this material had to be terminated. The hazard had to do with the lack of adequate means for the disposal of toxic elemental beryllium.
Document ID
19870018996
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Buoncristiani, A. M.
(Christopher Newport Coll. Newport News, VA, United States)
Date Acquired
September 5, 2013
Publication Date
May 31, 1985
Subject Category
Solid-State Physics
Report/Patent Number
NASA-CR-181257
NAS 1.26:181257
Report Number: NASA-CR-181257
Report Number: NAS 1.26:181257
Accession Number
87N28429
Funding Number(s)
CONTRACT_GRANT: NAG1-488
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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