A study of target heating in low-energy ion-beam processing

A bonded thermocouple approach is employed to accurately determine semiconductor surface heating profiles as a function of energy, position, and gas species in a high-current low-energy ion beam etching system. The total beam current is kept at 200 mA and the extractor voltage at 300 V. It is found that the ionic species, the radial position in the ion beam, and the kinetic energy of the ions, all of which effect the ion current density, must be taken into account in recording the temperature rise of the bombarded surface. It is also noted that the occurrence of this temperature rise is dependent on the thermal contacts and heat sinking.