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Reflectivity of silicon carbide in the extreme ultravioletReflectivity and scattering measurements on samples of SiC manufactured by a variety of processes. Measurements were made from near-normal to grazing incidence at wavelengths in the range of 114 to 1216 A. CVD SiC displays the highest reflectivity at EUV wavelengths and normal incidence. At grazing incidence, Si-rich samples show reflectivity cutoff identical to polycrystalline Si. From the limited data available for single-crystal material, it is concluded that CVD material has comparable performance.
Document ID
19870032468
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Mrowka, Stanley
(California Univ. Berkeley, CA, United States)
Jelinsky, Patrick
(California Univ. Berkeley, CA, United States)
Bowyer, Stuart
(California, University Berkeley, United States)
Sanger, Greg
(United Technologies Research Center West Palm Beach, FL, United States)
Choyke, W. J.
(Westinghouse Research Laboratories Pittsburgh, PA, United States)
Date Acquired
August 13, 2013
Publication Date
January 1, 1986
Subject Category
Optics
Accession Number
87A19742
Funding Number(s)
CONTRACT_GRANT: NGR-05-003-450
Distribution Limits
Public
Copyright
Other

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