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Analysis of optically controlled microwave/millimeter-wave device structuresThe light-induced voltage and the change in the source-to-drain channel current under optical illumination higher than the semiconductor bandgap for GaAs MESFET, InP MESFET, Al0.3Ga0.7As/GaAs high electron mobility transistor (HEMT) and GaAs permeable base transistor (PBT) were analytically obtained. The GaAs PBT and GaAs MESFET have much higher sensitivity than InP MESFET. The Al0.3Ga0.7As/GaAs HEMT is observed to have the highest sensitivity. Variation in device parasitics due to optical illumination and its effect on the cutoff frequencies f sub T and f sub max are also investigated.
Document ID
19870036406
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1109/TMTT.1986.1133548
Authors
Simons, Rainee N. (NASA Lewis Research Center Cleveland, OH, United States)
Bhasin, Kul B. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 13, 2013
Publication Date
December 1, 1986
Publication Information
Publication: IEEE Transactions on Microwave Theory and Techniques
Volume: MTT-34
ISSN: 0018-9480
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
ISSN: 0018-9480
Accession Number
87A23680
Distribution Limits
Public
Copyright
Other

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