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Performance Of Infrared-Detector ArrayReport describes design, characteristics, and performance of Si:Sb integrated array of infrared detectors, sensitivity of which extends to wavelength of about 31 micrometer, improvement over 28-micrometer limit of current Si:As impurity-band-conduction devices. Also describes electronics and special Dewar system developed to test device at low temperature to reduce background noise.
Document ID
19880000078
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Goebel, J. H. (NASA Ames Research Center, Moffett Field, Calif.)
Mckelvey, M. E. (NASA Ames Research Center, Moffett Field, Calif.)
Mccreight, C. R. (NASA Ames Research Center, Moffett Field, Calif.)
Anderson, G. M. (NASA Ames Research Center, Moffett Field, Calif.)
Date Acquired
August 13, 2013
Publication Date
February 1, 1988
Publication Information
Publication: NASA Tech Briefs
Volume: 12
Issue: 2
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
ARC-11735
Report Number: ARC-11735
ISSN: 0145-319X
Accession Number
88B10078
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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