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Micromachining Of SiliconEtching rates of alloys and heavily-doped semiconductor materials significantly higher than lightly doped semiconductor if proper etching system used. Selectivity used to etch regions of semiconductor preferentially while not etching other unmasked regions. When selective etching used with laser-induced-diffusion techniques, possible to make structures that cannot be made at present. Possible to produce well-defined structures in and through wafer while not damaging existing structures on wafer.
Document ID
19880000143
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Dickman, John E.
(NASA Lewis Research Center, Cleveland, Ohio.)
Date Acquired
August 13, 2013
Publication Date
February 1, 1988
Publication Information
Publication: NASA Tech Briefs
Volume: 12
Issue: 2
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
LEW-14481
Report Number: LEW-14481
ISSN: 0145-319X
Accession Number
88B10143
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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