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V-band IMPATT power amplifierThis program is the result of the continuing demand and future requirement for a high data rate 60-GHz communications link. A reliable solid-state transmitter which delivers the necessary power over a wide bandwidth using the present IMPATT diode technology required the development of combining techniques. The development of a 60-GHz IMPATT power combiner amplifier is detailed. The results form a basis from which future wideband, high-power IMPATT amplifiers may be developed. As a result, several state-of-the-art advancements in millimeter-wave components technology were achieved. Specific achievements for the amplifier integration were: development of a nonresonant divider/combiner circuit; reproducible multiple junction circulator assemblies; and reliable high power 60-GHz IMPATT diodes. The various design approaches and tradeoffs which lead to the final amplifier configuration are discussed. A detailed circuit design is presented for the various amplifier components, and the conical line combiner, radial line combiner, and circulator development are discussed. The performance of the amplifier, the overall achievement of the program, the implications of the results, and an assessment of future development needs and recommendations are examined.
Document ID
19880000885
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Schell, S. W.
(TRW Defense Systems Group Redondo Beach, CA, United States)
Date Acquired
September 5, 2013
Publication Date
September 1, 1985
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NASA-CR-180711
NAS 1.26:180711
Report Number: NASA-CR-180711
Report Number: NAS 1.26:180711
Accession Number
88N10267
Funding Number(s)
CONTRACT_GRANT: NAS5-27331
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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