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AlGaAs heterojunction lasersThe characterization of 8300 A lasers was broadened, especially in the area of beam quality. Modulation rates up to 2 Gbit/sec at output powers of 20 mW were observed, waveform fidelity was fully adequate for low BER data transmission, and wavefront measurements showed that phase aberrations were less than lamda/50. Also, individually addressable arrays of up to ten contiguous diode lasers were fabricated and tested. Each laser operates at powers up to 30 mW CW in single spatial mode. Shifting the operating wavelength of the basic CSP laser from 8300 A to 8650 A was accomplished by the addition of Si to the active region. Output power has reached 100 mW single mode, with excellent far field wave front properties. Operating life is currently approx. 1000 hrs at 35 mW CW. In addition, laser reliability, for operation at both 8300 A and 8650 A, has profited significantly from several developments in the processing procedures.
Document ID
19880007636
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Goldstein, B.
(RCA Labs. Princeton, NJ, United States)
Pultz, G. N.
(RCA Labs. Princeton, NJ, United States)
Carlin, D. B.
(RCA Labs. Princeton, NJ, United States)
Slavin, S. E.
(RCA Labs. Princeton, NJ, United States)
Ettenberg, M.
(RCA Labs. Princeton, NJ, United States)
Date Acquired
September 5, 2013
Publication Date
February 1, 1988
Subject Category
Lasers And Masers
Report/Patent Number
NAS 1.26:4119
NASA-CR-4119
RCA-PRRL-87-CR-1
Report Number: NAS 1.26:4119
Report Number: NASA-CR-4119
Report Number: RCA-PRRL-87-CR-1
Accession Number
88N17020
Funding Number(s)
CONTRACT_GRANT: NAS1-17441
PROJECT: RTOP 506-44-21-01
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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