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Improved GaP doped SiGe thermoelectric materialWork at TECO has independently confirmed the early results obtained at JPL that high-temperature heat-treatment of SiGe/GaP alloys can significantly increase the figure of merit Z of these alloys. Several possible reasons for this improvement are given. Experiments are in progress to test these various hypothesis.
Document ID
19880015119
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Vandersande, Jan W. (Jet Propulsion Lab. California Inst. of Tech., Pasadena., United States)
Wood, Charles (Jet Propulsion Lab. California Inst. of Tech., Pasadena., United States)
Draper, Susan L. (NASA Lewis Research Center Cleveland, OH., United States)
Raag, Valvo (Thermo Electron Corp. Waltham, MA., United States)
Alexander, Michael (Thermo Electron Corp. Waltham, MA., United States)
Masters, Richard (Thermo Electron Corp. Waltham, Mass., United States)
Date Acquired
August 13, 2013
Publication Date
January 1, 1988
Publication Information
Publication: New Mexico Univ., Transactions of the Fifth Symposium on Space Nuclear Power Systems
Subject Category
Energy Production And Conversion
Accession Number
88N24503
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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