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Electrical Properties of Materials for Elevated Temperature Resistance Strain Gage ApplicationThe objective was to study the electrical resistances of materials that are potentially useful as resistance strain gages at 1000 C. Transition metal carbides and nitrides, boron carbide and silicon carbide were selected for the experimental phase of this research. Due to their low temperature coefficient of resistance and good stability, TiC, ZrC, B sub 4 C and beta-SiC are suggested as good candidates for high temperature resistance strain gage applications.
Document ID
19880020722
Acquisition Source
Legacy CDMS
Document Type
Thesis/Dissertation
Authors
Lei, Jih-Fen
(Northwestern Univ. Evanston, IL, United States)
Date Acquired
September 5, 2013
Publication Date
June 1, 1987
Subject Category
Instrumentation And Photography
Report/Patent Number
NASA-CR-182214
NAS 1.26:182214
Report Number: NASA-CR-182214
Report Number: NAS 1.26:182214
Accession Number
88N30106
Funding Number(s)
CONTRACT_GRANT: NAG3-501
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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