Characterization of direct readout Si:Sb and Si:Ga infrared detector arrays for space-based astronomy

Preliminary test results from the evaluation of Si:Sb and Si:Ga 58 x 62-element infrared detector arrays are presented. These devices are being characterized under background conditions and readout rates representative of operation in orbiting, crogenically-cooled infrared observatories. The arrays are hybridized to silicon direct-readout multiplexers which allow random-access and nondestructive readout. Array performance optimization is being conducted with a flexible microcomputer-based drive and readoaut electronics system. Preliminary Si:Sb measurements indicate a sense node capacitance of 0.06 pF, peak (28-micron) responsivity above 3 A/W at 2V bias, read noise of 130 rms e(-), dark current approximately 10 e(-)/s, and a well capacity greater than 10 to the 5th e(-). The limited test data available on the performance of the Si:Ga array are also discussed.