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Optically-Controlled Microwave Devices And CircuitsNASA Technical Memorandum discusses physical basis and dc and microwave characteristics of optically-controlled microwave devices described in literature. Emphasis on responses of GaAs/GaAlAs high-electron-mobility transistors (HEMT's) and GaAs metal/semiconductor field-effect transistors (MESFET's) to light. Devices used to detect radio-frequency modulation of optical signals, to control gains of amplifiers, and to provide injection locking of oscillators.
Document ID
19890000158
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Bhasin, Kul B.
(NASA Lewis Research Center, Cleveland, OH.)
Simons, Rainee N.
(NASA Lewis Research Center, Cleveland, OH.)
Date Acquired
August 14, 2013
Publication Date
April 1, 1989
Publication Information
Publication: NASA Tech Briefs
Volume: 13
Issue: 4
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
LEW-14710
Report Number: LEW-14710
ISSN: 0145-319X
Accession Number
89B10158
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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