NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Press Enter or click the Search button to begin your search.

Back to Results
Asymmetrical SRAM Cells For Radiation TestsFeatures of circuits altered to increase or decrease sensitivity to radiation. State-space analysis used to analyze single-event-upset behavior of memory cell. When voltage on node a is set at one of indicated initial values Vao and then released, voltages on nodes a and b then follow indicated trajectory to final logic "one" or logic "zero" state. Ability to do this important for design of radiation-detecting integrated circuits (deliberately made more sensitive to ionizing radiation) and "radiation-hardened" integrated circuits - those intended to be relatively invulnerable to intense radiation.
Document ID
19890000272
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Buehler, Martin G.
(Caltech)
Date Acquired
August 14, 2013
Publication Date
June 1, 1989
Publication Information
Publication: NASA Tech Briefs
Volume: 13
Issue: 6
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
ISSN: 0145-319X
Report Number: NPO-16890
NPO-16890
Accession Number
89B10272
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

Available Downloads

There are no available downloads for this record.
No Preview Available