Deep levels and radiation effects in p-InP

A survey was conducted on past studies of hole traps in InP. An experiment was designed to evaluate hole traps in Zn-doped InP after fabrication, after electron irradiation and after annealing using deep level transient spectroscopy. Data similar to that of Yamaguchi was seen with observation of both radiation-induced hole and electron traps at E sub A=0.45 eV and 0.03 eV, respectively. Both traps are altered by annealing. It is also shown that trap parameters for surface-barrier devices are influenced by many factors such as bias voltage, which probes traps at different depths below the surface. These devices require great care in data evaluation.