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Position-sensitive CdTe detector using improved crystal growth methodThe feasibility of developing a position-sensitive CdTe detector array for astronomical observations in the hard X-ray, soft gamma ray region is demonstrated. In principle, it was possible to improve the resolution capability for imaging measurements in this region by orders of magnitude over what is now possible through the use of CdTe detector arrays. The objective was to show that CdTe crystals of the quality, size and uniformity required for this application can be obtained with a new high pressure growth technique. The approach was to fabricate, characterize and analyze a 100 element square array and several single-element detectors using crystals from the new growth process. Results show that detectors fabricated from transversely sliced, 7 cm diameter wafers of CdTe exhibit efficient counting capability and a high degree of uniformity over their entire areas. A 100 element square array of 1 sq mm detectors was fabricated and operated.
Document ID
19890015680
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Date Acquired
September 5, 2013
Publication Date
September 20, 1988
Subject Category
Solid-State Physics
Report/Patent Number
NAS 1.26:183427
NASA-CR-183427
Report Number: NAS 1.26:183427
Report Number: NASA-CR-183427
Accession Number
89N25051
Funding Number(s)
CONTRACT_GRANT: NAS5-30289
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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