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Surface emitting lasers for optical circuitry - Optical interconnect technologySurface emitting (SE) lasers and their application in VLSI optical interconnect networks are considered. In particular, the advantages provided by SE lasers in optical interconnect circuits and monolithic integration are discussed. Some of the requirements, such as wavelength stability, power dissipation, emission angle, size, etc., are compared with respect to conventional laser diodes. It is noted that the operation of SE lasers will be critically dependent on the properties of the feedback reflectors. Experimental measurements of reflection spectra on AlGaAs/GaAs multilayer reflectors and InAlAs/InGaAs etalons formed with molecular beam epitaxy (MBE) are presented.
Document ID
19890028449
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Yu, P. K. L.
(California Univ. La Jolla, CA, United States)
Bradley, E.
(California, University La Jolla, United States)
Mathis, R. F.
(General Dynamics Corp. San Diego, CA, United States)
Date Acquired
August 14, 2013
Publication Date
January 1, 1988
Subject Category
Lasers And Masers
Meeting Information
Meeting: Optoelectronic Signal Processing for Phased-Array Antennas
Location: Los Angeles, CA
Country: United States
Start Date: January 12, 1988
End Date: January 13, 1988
Sponsors: SPIE
Accession Number
89A15820
Distribution Limits
Public
Copyright
Other

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