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On the two-dimensional modelling of horizontal CVD reactors and its limitationsIn order to clarify under what conditions two-dimensional theoretical models can realistically account for the actual growth rate distribution in horizontal CVD reactors, a systematic numerical study was performed, and the results were compared with published experimental data for the MOCVD of gallium arsenide. Three models of increasing complexity were studied. It is shown that two-dimensional models can produce realistic predictions only for reactors with large width-to-height (aspect) ratios, that are operated at subcritical Rayleigh number,i.e., under dominant forced flow conditions. But even then, depending on the carrier gas, thermal (Soret) diffusion must be included in the model. Furthermore, velocity corrections for finite aspect ratios must be made, and buoyancy effects can be significant in the entrance region. On the other hand, the results are relatively insensitive to axial diffusion, temperature dependence of transport properties (versus averaged properties), and an assumed Poiseuille velocity profile (versus a rigorous solution of the velocity field). Yet, boundary layer approximations are prone to give unrealistic results at the low Reynolds numbers typical for CVD operations.
Document ID
19890036105
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Ouazzani, Jalil
(Alabama Univ. Huntsville, AL, United States)
Chiu, Kuan-Cheng
(Alabama Univ. Huntsville, AL, United States)
Rosenberger, Franz
(Alabama, University Huntsville, United States)
Date Acquired
August 14, 2013
Publication Date
September 1, 1988
Publication Information
Publication: Journal of Crystal Growth
Volume: 91
Issue: 4 Se
ISSN: 0022-0248
Subject Category
Solid-State Physics
Report/Patent Number
ISSN: 0022-0248
Accession Number
89A23476
Funding Number(s)
CONTRACT_GRANT: NAG8-704
CONTRACT_GRANT: NSF DMR-84-08398
Distribution Limits
Public
Copyright
Other

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