Optical properties of epitaxial CoSi2 and NiSi2 films on silicon

The optical constants of epitaxial films of CoSi2 and NiSi2, grown by molecular beam epitaxy on Si(111), in the energy range of 0.9-4.0 eV have been measured. The behavior of the optical constants is characteristic of metals. It is Drude-like in low energy region and deviates from Drude behavior as interband transitions set in. Interband transitions are found to have already set in at 1 eV. The absorption varies significantly with energy, which has implications for photoresponse studies of internal photoemission in these material systems.