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Forward Bias Inhibits Single-Event UpsetsBipolar integrated circuits more resistant to ionizing radiation. Tests show resistance of bipolar integrated logic or memory circuit by single-event upsets increased by imparting forward bias to diode constituted by buried layer of substrate and collector.
Document ID
19900000145
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Zoutendyk, John A.
(Caltech)
Date Acquired
August 14, 2013
Publication Date
April 1, 1990
Publication Information
Publication: NASA Tech Briefs
Volume: 14
Issue: 4
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-17573
Report Number: NPO-17573
ISSN: 0145-319X
Accession Number
90B10145
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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