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High-temperature deformation and microstructural analysis for Si3N4-Sc2O3It was indicated that Si3N4 doped with Sc2O3 may exhibit high temperature mechanical properties superior to Si3N4 systems with various other oxide sintered additives. High temperature deformation of samples was studied by characterizing the microstructures before and after deformation. It was found that elements of the additive, such as Sc and O, exist in small amounts at very thin grain boundary layers and most of them stay in secondary phases at triple and multiple grain boundary junctions. These secondary phases are devitrified as crystalline Sc2Si2O7. Deformation of the samples was dominated by cavitational processes rather than movements of dislocations. Thus the excellent deformation resistance of the samples at high temperature can be attributed to the very small thickness of the grain boundary layers and the crystalline secondary phase.
Document ID
19900019424
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Cheong, Deock-Soo
(NASA Lewis Research Center Cleveland, OH, United States)
Sanders, William A.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 6, 2013
Publication Date
April 1, 1990
Subject Category
Nonmetallic Materials
Report/Patent Number
NASA-TM-103239
E-5593
NAS 1.15:103239
Report Number: NASA-TM-103239
Report Number: E-5593
Report Number: NAS 1.15:103239
Meeting Information
Meeting: Annual Meeting of the American Ceramic Society
Location: Dallas, TX
Country: United States
Start Date: April 23, 1990
End Date: April 27, 1990
Accession Number
90N28740
Funding Number(s)
PROJECT: RTOP 505-63-1A
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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