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GaInAsSb/AlGaAsSb injection lasers for remote sensing applicationsDouble heterostructures of InGaAsSb/AlGaAsSb quaternary alloys on (100) GaSb substrates were grown by the liquid phase epitaxy (LPE) technique. Room temperature operation near 2.1 micron wavelength has been achieved under pulsed conditions with pulsed threshold current density of 7kA/sq cm.
Document ID
19900044933
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Forouhar, Siamak (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Cody, Jeffrey (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Katz, Joseph (JPL Pasadena, CA, United States)
Date Acquired
August 14, 2013
Publication Date
January 1, 1989
Subject Category
Lasers And Masers
Meeting Information
Meeting: Laser Applications in Meteorology and Earth and Atmospheric Remote Sensing
Location: Los Angeles, CA
Country: United States
Start Date: January 16, 1989
End Date: January 18, 1989
Accession Number
90A31988
Distribution Limits
Public
Copyright
Other

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