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Tm,Ho:YLF laser end-pumped by a semiconductor diode laser arrayAn Ho:YLF crystal including Tm as sensitizers for the activator Ho, is optically pumped with a semiconductor diode laser array to generate 2.1 micron radiation with a pump power to output power of efficiency as high as 68 percent. The prior-art dual sensitizer system of Er and Tm requires cooling, such as by LN2, but by using Tm alone and decreasing the concentrations of Tm and Ho, and decreasing the length of the laser rod to about 1 cm, it has been demonstrated that laser operation can be obtained from a temperature of 77 K with an efficiency as high as 68 percent up to ambient room temperature with an efficiency at that temperature as high as 9 percent.
Document ID
19910006215
Acquisition Source
Legacy CDMS
Document Type
Other - Patent
Authors
Hemmati, Hamid
(Jet Propulsion Lab. California Inst. of Tech., Pasadena., United States)
Date Acquired
August 14, 2013
Publication Date
November 27, 1990
Subject Category
Lasers And Masers
Report/Patent Number
Patent Number: US-PATENT-4,974,230
Patent Number: NASA-CASE-NPO-17282-1-CU
Patent Application Number: US-PATENT-APPL-SN-235150
Accession Number
91N15528
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-4,974,230|NASA-CASE-NPO-17282-1-CU
Patent Application
US-PATENT-APPL-SN-235150
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