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Thermal shock testing for assuring reliability of glass-sealed microelectronic packagesTests were performed to determine if thermal shocking is destructive to glass-to-metal seal microelectronic packages and if thermal shock step stressing can compare package reliabilities. Thermal shocking was shown to be not destructive to highly reliable glass seals. Pin-pull tests used to compare the interfacial pin glass strengths showed no differences between thermal shocked and not-thermal shocked headers. A 'critical stress resistance temperature' was not exhibited by the 14 pin Dual In-line Package (DIP) headers evaluated. Headers manufactured in cryogenic nitrogen based and exothermically generated atmospheres showed differences in as-received leak rates, residual oxide depths and pin glass interfacial strengths; these were caused by the different manufacturing methods, in particular, by the chemically etched pins used by one manufacturer. Both header types passed thermal shock tests to temperature differentials of 646 C. The sensitivity of helium leak rate measurements was improved up to 70 percent by baking headers for two hours at 200 C after thermal shocking.
Document ID
19910011187
Acquisition Source
Legacy CDMS
Document Type
Technical Memorandum (TM)
Authors
Thomas, Walter B., III
(NASA Goddard Space Flight Center Greenbelt, MD., United States)
Lewis, Michael D.
(Unisys Corp. Lanham, MD., United States)
Date Acquired
September 6, 2013
Publication Date
March 1, 1991
Subject Category
Quality Assurance And Reliability
Report/Patent Number
NASA-TM-104537
NAS 1.15:104537
REPT-91B00078
Report Number: NASA-TM-104537
Report Number: NAS 1.15:104537
Report Number: REPT-91B00078
Accession Number
91N20500
Funding Number(s)
PROJECT: RTOP 397-12-20
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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