NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login

Press Enter or click the Search button to begin your search.

Back to Results
Laterally stacked Schottky diodes for infrared sensor applicationsLaterally stacked Schottky diodes for infrared sensor applications are fabricated utilizing porous silicon having pores. A Schottky metal contract is formed in the pores, such as by electroplating. The sensors may be integrated with silicon circuits on the same chip with a high quantum efficiency, which is ideal for IR focal plane array applications due to uniformity and reproducibility.
Document ID
19910012121
Acquisition Source
Legacy CDMS
Document Type
Other - Patent
Authors
Lin, True-Lon (Jet Propulsion Lab. California Inst. of Tech., Pasadena., United States)
Date Acquired
August 14, 2013
Publication Date
February 5, 1991
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
Patent Number: NASA-CASE-NPO-17426-1-CU
Patent Number: US-PATENT-4,990,988
Patent Application Number: US-PATENT-APPL-SN-363815
Accession Number
91N21434
Funding Number(s)
CONTRACT_GRANT: NAS7-918
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
NASA-CASE-NPO-17426-1-CU|US-PATENT-4,990,988
Patent Application
US-PATENT-APPL-SN-363815

Related Records

IDRelationTitleN90-10329Superseded By
No Preview Available