Computed stress fields in GaAs during vertical Bridgman growth

The thermoelastic stress field of GaAs crystals grown by the vertical Bridgman method has been approximated using a linear elastic, axisymmetric stress model. The model included the effects due to the thermal field and the gravitational field, as well as the interaction with the ampoule, but did not fully account for the elastic anisotropy of the crystal. Realistic thermal fields for different furnace temperatures and insulation zone thicknesses were computed with a similar model. The difference between the Von Mises stress and the critical resolved shear stress (CRSS) was used as a measure of the number of dislocations present. Different sets of growth parameters were examined to determine which produced the lowest amount of stress in the crystal. Results show that the crystal-ampoule interaction is the most important parameter in dislocation generation. In addition, for the same sticking boundary conditions, concave interfaces have lower stress than convex interfaces.