Optically induced absorption modulation in a periodically delta-doped InGaAs/GaAs multiple quantum well structure

Strong optically induced absorption modulation has been achieved in a periodically delta-doped InGaAs/GaAs multiple quantum well structure. The use of delta-doping has enabled efficient modulation in short-period structures using a low-power semiconductor laser. With an excitation intensity of 100 mW/sq cm an absolute quantum well absorption change of more than 9000 cm has been measured corresponding to a differential absorption change as high as 58 percent at the excitonic resonance.