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Effects of transistor geometry on CCD output sensitivityThis paper discusses recent progress in the understanding of the fabrication of low noise floating diffusion output amplifiers for special purpose charge-coupled devices. Emphasis has been given to reducing the total node capacitance and increasing the output sensitivity. Measurements of noise on experimental devices has yielded noise less than 3 electrons rms at 50 kpixel data rate.
Document ID
19910052921
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Kim, H.
(Tektronix, Inc. Beaverton, OR, United States)
Blouke, Morley M.
(Tektronix, Inc. Beaverton, OR, United States)
Heidtmann, D. L.
(Tektronix, Inc. Beaverton, OR, United States)
Date Acquired
August 15, 2013
Publication Date
January 1, 1990
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: Charge-Coupled Devices and Solid State Optical Sensors
Location: Santa Clara, CA
Country: United States
Start Date: February 12, 1990
End Date: February 14, 1990
Accession Number
91A37544
Funding Number(s)
CONTRACT_GRANT: NAS5-29370
Distribution Limits
Public
Copyright
Other

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