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Elevated temperature mechanical behavior of monolithic and SiC whisker-reinforced silicon nitridesThe mechanical behavior of a 30 volume percent SiC whisker reinforced silicon nitride and a similar monolithic silicon nitride were measured at several temperatures. Measurements included strength, fracture toughness, crack growth resistance, dynamic fatigue susceptibility, post oxidation strength, and creep rate. Strength controlling defects were determined with fractographic analysis. The addition of SiC whiskers to silicon nitride did not substantially improve the strength, fracture toughness, or crack growth resistance. However, the fatigue resistance, post oxidation strength, and creep resistance were diminished by the whisker addition.
Document ID
19920005974
Acquisition Source
Legacy CDMS
Document Type
Technical Memorandum (TM)
Authors
Salem, Jonathan A.
(Cleveland State Univ. OH., United States)
Choi, Sung R.
(Analex Corp. Cleveland, OH., United States)
Sanders, William A.
(Analex Corp. Brook Park, OH., United States)
Fox, Dennis S.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 6, 2013
Publication Date
December 1, 1991
Subject Category
Nonmetallic Materials
Report/Patent Number
NASA-TM-105245
E-6572
NAS 1.15:105245
Accession Number
92N15192
Funding Number(s)
PROJECT: RTOP 505-63-1M
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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