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Using silicon diodes for detecting the liquid-vapor interface in hydrogenTests were performed using commercially available silicon diode temperature sensors to detect the location of the liquid-vapor interface in hydrogen during ground test programs. Results show that by increasing the current into the sensor, silicon diodes can be used as liquid level point sensors. After cycling the sensors from liquid to vapor several times, it was found that with a 30 mA (milliamps) input current, the sensors respond within 2 seconds by measuring a large voltage difference when transitioning from liquid to vapor across the interface. Nearly instantaneous response resulted during a transition form vapor to liquid. Detailed here are test procedures, experimental results, and guidelines for applying this information to other test facilities.
Document ID
19920009214
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Dempsey, Paula J.
(NASA Lewis Research Center Cleveland, OH, United States)
Fabik, Richard H.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 6, 2013
Publication Date
January 1, 1992
Subject Category
Instrumentation And Photography
Report/Patent Number
NASA-TM-105541
E-6851
NAS 1.15:105541
Report Number: NASA-TM-105541
Report Number: E-6851
Report Number: NAS 1.15:105541
Meeting Information
Meeting: International Instrumentation Symposium
Location: Las Vegas, NV
Country: United States
Start Date: April 26, 1992
End Date: April 30, 1992
Sponsors: Instrument Society of America
Accession Number
92N18456
Funding Number(s)
PROJECT: RTOP 593-21-00
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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