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Chemical vapor deposition modeling for high temperature materialsThe formalism for the accurate modeling of chemical vapor deposition (CVD) processes has matured based on the well established principles of transport phenomena and chemical kinetics in the gas phase and on surfaces. The utility and limitations of such models are discussed in practical applications for high temperature structural materials. Attention is drawn to the complexities and uncertainties in chemical kinetics. Traditional approaches based on only equilibrium thermochemistry and/or transport phenomena are defended as useful tools, within their validity, for engineering purposes. The role of modeling is discussed within the context of establishing the link between CVD process parameters and material microstructures/properties. It is argued that CVD modeling is an essential part of designing CVD equipment and controlling/optimizing CVD processes for the production and/or coating of high performance structural materials.
Document ID
19920009215
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Goekoglu, Sueleyman
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 6, 2013
Publication Date
January 1, 1992
Subject Category
Chemistry And Materials (General)
Report/Patent Number
E-6772
NASA-TM-105386
NAS 1.15:105386
Report Number: E-6772
Report Number: NASA-TM-105386
Report Number: NAS 1.15:105386
Meeting Information
Meeting: 1991 Fall Meeting of the Materials Research Society
Location: Boston, MA
Country: United States
Start Date: December 2, 1991
End Date: December 6, 1991
Accession Number
92N18457
Funding Number(s)
PROJECT: RTOP 510-01-50
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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