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Fabrication of nanometer single crystal metallic CoSi2 structures on SiAmorphous Co:Si (1:2 ratio) films are electron gun-evaporated on clean Si(111), such as in a molecular beam epitaxy system. These layers are then crystallized selectively with a focused electron beam to form very small crystalline Co/Si2 regions in an amorphous matrix. Finally, the amorphous regions are etched away selectively using plasma or chemical techniques.
Document ID
19920009319
Acquisition Source
Legacy CDMS
Document Type
Other - Patent
Authors
Nieh, Kai-Wei
(NASA Pasadena Office CA, United States)
Lin, True-Lon
(NASA Pasadena Office CA, United States)
Fathauer, Robert W.
(Jet Propulsion Lab. California Inst. of Tech., Pasadena., United States)
Date Acquired
August 15, 2013
Publication Date
December 24, 1991
Subject Category
Composite Materials
Report/Patent Number
Patent Application Number: US-PATENT-APPL-SN-677373
Patent Number: NASA-CASE-NPO-17736-2-CU
Patent Number: US-PATENT-5,075,243
Patent Application Number: US-PATENT-APPL-SN-392166
Accession Number
92N18561
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
NASA-CASE-NPO-17736-2-CU|US-PATENT-5,075,243
Patent Application
US-PATENT-APPL-SN-677373|US-PATENT-APPL-SN-392166
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