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Method for producing edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structureA method for fabricating an edge geometry superconducting tunnel junction device is discussed. The device is comprised of two niobium nitride superconducting electrodes and a magnesium oxide tunnel barrier sandwiched between the two electrodes. The NbN electrodes are preferably sputter-deposited, with the first NbN electrode deposited on an insulating substrate maintained at about 250 C to 500 C for improved quality of the electrode.
Document ID
19920012797
Acquisition Source
Legacy CDMS
Document Type
Other - Patent
Authors
Hunt, Brian D. (California Inst. of Tech. Pasadena., United States)
Leduc, Henry G. (Jet Propulsion Lab. California Inst. of Tech., Pasadena., United States)
Date Acquired
August 15, 2013
Publication Date
March 31, 1992
Subject Category
Solid-State Physics
Report/Patent Number
Patent Application Number: US-PATENT-APPL-SN-642765
Patent Application Number: US-PATENT-APPL-SN-387928
Patent Number: US-PATENT-5,100,694
Patent Number: NASA-CASE-NPO-17812-2-CU
Accession Number
92N22040
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-5,100,694|NASA-CASE-NPO-17812-2-CU
Patent Application
US-PATENT-APPL-SN-642765|US-PATENT-APPL-SN-387928

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