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C-band superconductor/semiconductor hybrid field-effect transistor amplifier on a LaAlO3 substrateA single-stage C-band superconductor/semiconductor hybrid field-effect transistor amplifier was designed, fabricated, and tested at 77 K. The large area (1 inch x 0.5 inches) high temperature superconducting Tl-Ba-Ca-Cu-O (TBCCO) thin film was rf magnetron sputtered onto a LaAlO3 substrate. The film had a transition temperature of about 92 K after it was patterned and etched. The amplifier showed a gain of 6 dB and a 3 dB bandwidth of 100 MHz centered at 7.9 GHz. An identical gold amplifier circuit was tested at 77 K, and these results are compared with those from the hybrid amplifier.
Document ID
19920024960
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Nahra, J. J. (Cincinnati Univ. OH., United States)
Bhasin, K. B. (NASA Lewis Research Center Cleveland, OH, United States)
Toncich, S. S. (NASA Lewis Research Center Cleveland, OH, United States)
Subramanyam, G. (Cincinnati Univ. OH., United States)
Kapoor, V. J. (Cincinnati Univ. OH., United States)
Date Acquired
September 6, 2013
Publication Date
September 1, 1992
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NASA-TM-105828
E-7263
NAS 1.15:105828
Report Number: NASA-TM-105828
Report Number: E-7263
Report Number: NAS 1.15:105828
Meeting Information
Meeting: 1992 Applied Superconductivity Conference
Location: Chicago, IL
Country: United States
Start Date: August 23, 1992
End Date: August 26, 1992
Sponsors: IEEE
Accession Number
92N34204
Funding Number(s)
CONTRACT_GRANT: NCC3-33
PROJECT: RTOP 506-72-1B
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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