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Silicon device performance measurements to support temperature range enhancementCharacterization results of a MOS controlled thyristor (MCTA60P60) are presented. This device is rated for 60A and for an anode to cathode voltage of -600 V. As discussed in the last report, the MCT failed during 500 V leakage tests at 200 C. In contrast to the BJT (bipolar junction transistor), MOSFET, and IGBT (insulated gate bipolar transistor) devices tested, the breakdown voltage of the MCT decreases significantly with increasing temperature.
Document ID
19930010704
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Bromstead, James (Auburn Univ. AL, United States)
Weir, Bennett (Auburn Univ. AL, United States)
Cosby, Melvin (Auburn Univ. AL, United States)
Johnson, R. Wayne (Auburn Univ. AL, United States)
Nelms, R. Mark (Auburn Univ. AL, United States)
Askew, Ray (Auburn Univ. AL, United States)
Date Acquired
September 6, 2013
Publication Date
December 7, 1992
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NASA-CR-191957
NAS 1.26:191957
Report Number: NASA-CR-191957
Report Number: NAS 1.26:191957
Accession Number
93N19893
Funding Number(s)
CONTRACT_GRANT: NCC3-175
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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