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A kinetic and equilibrium analysis of silicon carbide chemical vapor deposition on monofilamentsChemical kinetics of atmospheric pressure silicon carbide (SiC) chemical vapor deposition (CVD) from dilute silane and propane source gases in hydrogen is numerically analyzed in a cylindrical upflow reactor designed for CVD on monofilaments. The chemical composition of the SiC deposit is assessed both from the calculated total fluxes of carbon and silicon and from chemical equilibrium considerations for the prevailing temperatures and species concentrations at and along the filament surface. The effects of gas and surface chemistry on the evolution of major gas phase species are considered in the analysis.
Document ID
19930017814
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Gokoglu, S. A. (NASA Lewis Research Center Cleveland, OH, United States)
Kuczmarski, M. A. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 6, 2013
Publication Date
May 1, 1993
Subject Category
Chemistry And Materials (General)
Report/Patent Number
NASA-TM-106137
E-7818
NAS 1.15:106137
Report Number: NASA-TM-106137
Report Number: E-7818
Report Number: NAS 1.15:106137
Meeting Information
Meeting: International Conference on Chemical Vapor Deposition (CVD 12)
Location: Honolulu, HI
Country: United States
Start Date: May 16, 1993
End Date: May 21, 1993
Sponsors: Electrochemical Society
Accession Number
93N27003
Funding Number(s)
PROJECT: RTOP 505-63-5A
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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