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A high efficiency Ka-band monolithic pseudomorphic HEMT amplifierA monolithic three-stage Ka-band amplifier has been designed and fabricated on a doped channel heterostructure. Devices with gate length of 0.2 micron and gate width of 50, 100, and 250 micron were cascaded. The gate and drain bias networks were also integrated. The small signal gain is 31 dB and the amplifier is capable of an output power of 190 mW with 23 dB gain and 30.2 percent power added efficiency at 31 GHz. This is a record efficiency for a multistage MMIC at this frequency.
Document ID
19930041789
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Saunier, Paul (NASA Lewis Research Center Cleveland, OH, United States)
Tserng, Hua Q. (NASA Lewis Research Center Cleveland, OH, United States)
Kao, Y. C. (Texas Instruments Central Research Labs. Dallas, United States)
Date Acquired
August 16, 2013
Publication Date
January 1, 1991
Publication Information
Publication: In: Monolithic microwave integrated circuits for sensors, radar, and communications systems; Proceedings of the Meeting, Orlando, FL, Apr. 2-4, 1991 (A93-25776 09-33)
Publisher: Society of Photo-Optical Instrumentation Engineers
Subject Category
Electronics And Electrical Engineering
Accession Number
93A25786
Funding Number(s)
CONTRACT_GRANT: NAS3-24239
Distribution Limits
Public
Copyright
Other

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