Multilayer thin film design as far ultraviolet quarterwave retardersAt short wavelengths, such as FUV, transparent, optically active materials are scarce. Reflection phase retardation by a multilayer thin film can be a good alternative in this wavelength region. We design a multilayer quarterwave retarder by calculating the electric fields at each boundary in the multilayer thin film. Using this method, we achieve designs of FUV multilayers which provide high, matched reflectances for both s- and p-polarization states, and at the same time a phase difference between these two states of nearly 90 deg. For example, a quarterwave retarder designed at the Lyman-alpha line (121.6 nm) has 81.05 percent reflectance for the s-polarization and 81.04 percent for the p-polarization state. The phase difference between these two polarization states is 90.07 deg. For convenience the retarders are designed for 45 deg angle of incidence, but our design approach can be used for any other angle of incidence. Aluminum and MgF2 are used as film materials and an opaque thick film of aluminum as the substrate.
Document ID
19930055642
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Kim, Jongmin (NASA Marshall Space Flight Center Huntsville, AL, United States)
Zukic, Muamer (NASA Marshall Space Flight Center Huntsville, AL, United States)
Torr, Douglas T. (NASA Marshall Space Flight Center Huntsville, AL, United States)
Wilson, Michele M. (Alabama Univ. Huntsville, United States)
Date Acquired
August 16, 2013
Publication Date
January 1, 1993
Publication Information
Publication: In: Multilayer and grazing incidence X-ray(EUV optics for astronomy and projection lithography; Proceedings of the Meeting, San Diego, CA, July 19-22, 1992 (A93-39601 15-74)
Publisher: Society of Photo-Optical Instrumentation Engineers
IDRelationTitle19930055604Collected WorksMultilayer and grazing incidence X-ray/EUV optics for astronomy and projection lithography; Proceedings of the Meeting, San Diego, CA, July 19-22, 1992