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Ge:Be far infrared photoconductorsSome conclusions reached are as follow. Ge:Be detectors provide lower Noise Equivalent Power (NEP) and higher responsivities than state of the art Ge:Ga detectors at 42 microns. Reliable Be doping was achieved with Czochralski growth from a carbon susceptor under vacuum. The photoconductive behavior of Ge:Be detectors is strongly influenced by the concentration of residual shallow impurities. Optimization of Ge:Be detectors requires both a low concentration and precise compensation of shallow acceptors.
Document ID
19930073192
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Haegel, N. M. (California Univ. Berkeley. Lawrence Berkeley Lab, CA, United States)
Haller, E. E. (California Univ. Berkeley. Lawrence Berkeley Lab, CA, United States)
Hansen, W. L. (California Univ. Berkeley. Lawrence Berkeley Lab, CA, United States)
Hueschen, M. R. (California Univ. Berkeley. Lawrence Berkeley Lab, CA, United States)
Luke, P. N. (California Univ. Berkeley. Lawrence Berkeley Lab, CA, United States)
Richards, P. L. (California Univ. Berkeley. Lawrence Berkeley Lab, CA, United States)
Townes, C. H. (California Univ. Berkeley., United States)
Watson, D. M. (California Univ. Berkeley. Lawrence Berkeley Lab, CA, United States)
Date Acquired
August 16, 2013
Publication Date
August 1, 1983
Publication Information
Publication: NASA. Ames Research Center, Infrared Detector Technology Workshop
Subject Category
Optics
Accession Number
93N70639
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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