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Neutron transmutation doped Ge bolometersSome conclusions reached are as follow. Neutron Transmutation Doping (NTD) of high quality Ge single crystals provides perfect control of doping concentration and uniformity. The resistivity can be tailored to any given bolometer operating temperature down to 0.1 K and probably lower. The excellent uniformity is advantaged for detector array development.
Document ID
19930073193
Acquisition Source
Ames Research Center
Document Type
Conference Paper
Authors
E E Haller (Lawrence Berkeley National Laboratory Berkeley, United States)
E Kreysa (Max-Planck-Inst. fuer Radioastronomie Bonn, Germany)
N P Palaio (University of California, Berkeley Berkeley, United States)
P L Richards (University of California, Berkeley Berkeley, United States)
M Rodder (University of California, Berkeley Berkeley, United States)
Date Acquired
August 16, 2013
Publication Date
August 1, 1983
Publication Information
Publication: NASA. Ames Research Center, Infrared Detector Technology Workshop
Subject Category
Solid-State Physics
Meeting Information
Meeting: IR Detector Technology Workshop
Location: Moffett Field, CA
Country: US
Start Date: July 12, 1983
End Date: July 13, 1983
Sponsors: Ames Research Center
Accession Number
93N70640
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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