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Making CoSi(2) Layers By Ion ImplantationMonolithic photovoltaic batteries containing vertical cells include buried CoSi(2) contact layers. Vertical-junction photovoltaic cells in series fabricated in monolithic structure. N- and p-doped silicon layers deposited epitaxially. The CoSi(2) layers, formed by ion implantation and annealing, serve as thin, low-resistance ohmic contacts between cells.
Document ID
19940000007
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Namavar, Fereydoon (Spire Corp.)
Date Acquired
August 16, 2013
Publication Date
January 1, 1994
Publication Information
Publication: NASA Tech Briefs
Volume: 18
Issue: 1
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
ISSN: 0145-319X
Report Number: LAR-14604
LAR-14604
Accession Number
94B10007
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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