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CCD With A "Thin Gate"Silicon-based charge-coupled device (CCD) using thin layer on poly-crystaline silicon developed to enhance sensitivity to ultraviolet and soft x-ray photons. In developmental thin-gate CCD, width of first three layers reduced in size so that they only cover fraction of pixel, allowing photons to enter fourth poly layer unimpeded.
Document ID
19940000293
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Janesick, James R.
(Caltech)
Date Acquired
August 16, 2013
Publication Date
May 1, 1994
Publication Information
Publication: Laser Tech. Brief.
Volume: 2
Issue: 2
Subject Category
Electronic Components And Circuits
Report/Patent Number
Report Number: NPO-18811
NPO-18811
Accession Number
94B10293
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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