NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Press Enter or click the Search button to begin your search.

Back to Results
Ampoule failure sensor time response testing: Experiment 1The response time of an ampoule failure sensor exposed to a liquid or vapor gallium-arsenide (GaAs) is investigated. The experimental configuration represents the sample/ampoule cartridge assembly used in NASA's Crystal Growth Furnace (CGF). The sensor is a chemical fuse made from a metal with which the semiconductor material reacts more rapidly than it does with the containing cartridge. For the III-IV compound of GaAs, a platinum metal was chosen based on the reaction of platinum and arsenic at elevated temperatures which forms a low melting eutectic. Ampoule failure is indicated by a step change in resistance of the failure sensor on the order of megohms. The sensors will increase the safety of crystal growth experiments by providing an indication that an ampoule has failed. Experimental results indicate that the response times (after a known ampoule failure) for the 0.003 and 0.010 inch ampoule failure sensors are 2.4 and 3.6 minutes, respectively. This ampoule failure sensor will be utilized in the CGF during the second United States Microgravity Laboratory Mission (USML-2) and is the subject of a NASA patent application.
Document ID
19940025694
Acquisition Source
Headquarters
Document Type
Technical Memorandum (TM)
Authors
Johnson, M. L.
(NASA Marshall Space Flight Center Huntsville, AL, United States)
Watring, D. A.
(NASA Marshall Space Flight Center Huntsville, AL, United States)
Date Acquired
September 6, 2013
Publication Date
April 1, 1994
Subject Category
Instrumentation And Photography
Report/Patent Number
NASA-TM-108449
NAS 1.15:108449
Report Number: NASA-TM-108449
Report Number: NAS 1.15:108449
Accession Number
94N30199
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
No Preview Available