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In-Situ Monitoring of Crystal Growth Using MEPHISTOThis experiment flew on STS-62 and is the continuation of a collaborative US-French study of the process of crystal formation. Knowledge from this experiment will support the development of techniques to grow higher quality semiconductor crystals on Earth.
Document ID
19950004106
Acquisition Source
Legacy CDMS
Document Type
Video
External Source(s)
http://youtu.be/0D4jqnhzqjw
Date Acquired
August 17, 2013
Publication Date
February 1, 1994
Subject Category
Materials Processing
Report/Patent Number
LERC-246
NONP-NASA-VT-94-23164
NASA-TM-109922
Report Number: LERC-246
Report Number: NONP-NASA-VT-94-23164
Report Number: NASA-TM-109922
Accession Number
95N10518
Distribution Limits
Public
Copyright
Public Use Permitted.

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