NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Ku-band high efficiency GaAs MMIC power amplifiersThe development of Ku-band high efficiency GaAs MMIC power amplifiers is examined. Three amplifier modules operating over the 13 to 15 GHz frequency range are to be developed. The first MMIC is a 1 W variable power amplifier (VPA) with 35 percent efficiency. On-chip digital gain control is to be provided. The second MMIC is a medium power amplifier (MPA) with an output power goal of 1 W and 40 percent power-added efficiency. The third MMIC is a high power amplifier (HPA) with 4 W output power goal and 40 percent power-added efficiency. An output power of 0.36 W/mm with 49 percent efficiency was obtained on an ion implanted single gate MESFET at 15 GHz. On a dual gate MESFET, an output power of 0.42 W/mm with 27 percent efficiency was obtained. A mask set was designed that includes single stage, two stage, and three stage single gate amplifiers. A single stage 600 micron amplifier produced 0.4 W/mm output power with 40 percent efficiency at 14 GHz. A four stage dual gate amplifier generated 500 mW of output power with 20 dB gain at 17 GHz. A four-bit digital-to-analog converter was designed and fabricated which has an output swing of -3 V to +/- 1 V.
Document ID
19950006818
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Tserng, H. Q.
(Texas Instruments, Inc. Dallas, TX, United States)
Witkowski, L. C.
(Texas Instruments, Inc. Dallas, TX, United States)
Wurtele, M.
(Texas Instruments, Inc. Dallas, TX, United States)
Saunier, Paul
(Texas Instruments, Inc. Dallas, TX, United States)
Date Acquired
September 6, 2013
Publication Date
May 1, 1988
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NASA-CR-182156
NAS 1.26:182156
Accession Number
95N13231
Funding Number(s)
PROJECT: RTOP 506-44-20
CONTRACT_GRANT: NAS3-25076
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
No Preview Available