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Surface Passivation for 3-5 Semiconductor Processing: Stable Gallium Sulphide Films by MOCVDGallium sulphide (GaS) has been deposited on GaAs to form stable, insulating, passivating layers. Spectrally resolved photoluminescence and surface recombination velocity measurements indicate that the GaS itself can contribute a significant fraction of the photoluminescence in GaS/GaAs structures. Determination of surface recombination velocity by photoluminescence is therefore difficult. By using C-V analysis of metal-insulator-semiconductor structures, passivation of the GaAs with GaS films is quantified.
Document ID
19950009173
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Macinnes, Andrew N. (Gallia, Inc. Weston, MA., United States)
Jenkins, Phillip P. (Sverdrup Technology, Inc. Cleveland, OH., United States)
Power, Michael B. (Gallia, Inc. Weston, MA., United States)
Kang, Soon (Case Western Reserve Univ. Cleveland, OH., United States)
Barron, Andrew R. (Harvard Univ. Cambridge, MA., United States)
Hepp, Aloysius F. (NASA Lewis Research Center Cleveland, OH, United States)
Tabib-Azar, Massood (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 6, 2013
Publication Date
November 1, 1994
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
E-9201
NAS 1.15:106761
NASA-TM-106761
Report Number: E-9201
Report Number: NAS 1.15:106761
Report Number: NASA-TM-106761
Meeting Information
Meeting: Spring Meeting
Location: San Francsico, CA
Country: United States
Start Date: April 12, 1993
End Date: April 16, 1993
Accession Number
95N15587
Funding Number(s)
PROJECT: RTOP 233-01-0A
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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