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Circular electrode geometry metal-semiconductor-metal photodetectorsThe invention comprises a high speed, metal-semiconductor-metal photodetector which comprises a pair of generally circular, electrically conductive electrodes formed on an optically active semiconductor layer. Various embodiments of the invention include a spiral, intercoiled electrode geometry and an electrode geometry comprised of substantially circular, concentric electrodes which are interposed. These electrode geometries result in photodetectors with lower capacitances, dark currents and lower inductance which reduces the ringing seen in the optical pulse response.
Document ID
19960001604
Acquisition Source
Legacy CDMS
Document Type
Other - Patent
Authors
Mcadoo, James A.
(NASA Langley Research Center Hampton, VA, United States)
Towe, Elias
(Virginia Univ. Charlottesville, VA., United States)
Bishop, William L.
(NASA Langley Research Center Hampton, VA, United States)
Wang, Liang-Guo
(NASA Langley Research Center Hampton, VA, United States)
Date Acquired
August 17, 2013
Publication Date
September 19, 1995
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
Patent Application Number: US-PATENT-APPL-SN-179598
Patent Number: US-PATENT-5,451,769
Patent Number: NASA-CASE-LAR-15172-1-CU
Accession Number
96N11612
Funding Number(s)
CONTRACT_GRANT: NAG1-1434
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-PATENT-5,451,769|NASA-CASE-LAR-15172-1-CU
Patent Application
US-PATENT-APPL-SN-179598
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